 | | | |
| PartNumber | NESG270034-T1-AZ | NESG270034-T1-AZ , EM6A9 | NESG270034-T1-AZ , EM6A9320BIA-4H |
| Description | RF Bipolar Transistors NPN Silicon Med Pwr Transistor | ||
| Manufacturer | CEL | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| RoHS | E | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | SiGe | - | - |
| Transistor Polarity | NPN | - | - |
| Emitter Base Voltage VEBO | 2.8 V | - | - |
| Continuous Collector Current | 0.75 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Package / Case | Power Mini-Mold | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 25 V | - | - |
| DC Current Gain hFE Max | 80 at 100 mA at 3 V | - | - |
| Height | 1.5 mm | - | - |
| Length | 4.5 mm | - | - |
| Operating Frequency | 900 MHz | - | - |
| Type | RF Silicon Germanium | - | - |
| Width | 2.5 mm | - | - |
| Brand | CEL | - | - |
| Pd Power Dissipation | 1900 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |