NGTB40N60FL2WG vs NGTB40N60IHLWG vs NGTB40N60FLWG

 
PartNumberNGTB40N60FL2WGNGTB40N60IHLWGNGTB40N60FLWG
DescriptionIGBT Transistors 600V/40A FAST IGBT FSII TIGBT Transistors 600V/40A IGBT FS1 IH TO-2IGBT Transistors IGBT 600V 40A FS1 Solar/UPS
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.85 V2 V1.85 V
Maximum Gate Emitter Voltage20 V20 V30 V
Continuous Collector Current at 25 C80 A80 A80 A
Pd Power Dissipation366 W--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
PackagingTubeTubeTube
Continuous Collector Current Ic Max80 A--
BrandON Semiconductor--
Gate Emitter Leakage Current200 nA100 nA100 nA
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
Unit Weight1.340411 oz0.229281 oz0.229281 oz
Series-NGTB40N60IHLWGNGTB40N60FLWG
Package Case-TO-247-3TO-247-3
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-TO-247TO-247
Power Max-250W257W
Reverse Recovery Time trr-400ns77ns
Current Collector Ic Max-80A80A
Voltage Collector Emitter Breakdown Max-600V600V
IGBT Type-Trench Field StopTrench Field Stop
Current Collector Pulsed Icm-200A160A
Vce on Max Vge Ic-2.4V @ 15V, 40A2.1V @ 15V, 40A
Switching Energy-400μJ (off)890μJ (on), 440μJ (off)
Gate Charge-130nC171nC
Td on off 25°C-70ns/140ns85ns/174ns
Test Condition-400V, 40A, 10 Ohm, 15V400V, 40A, 10 Ohm, 15V
Pd Power Dissipation-250 W257 W
Collector Emitter Voltage VCEO Max-600 V600 V
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