NSVBC850BLT1G vs NSVBC856BM3T5G vs NSVBC850CLT1G

 
PartNumberNSVBC850BLT1GNSVBC856BM3T5GNSVBC850CLT1G
DescriptionBipolar Transistors - BJT SS SOT23 GP XSTR NPNBipolar Transistors - BJT SS XSTR PNPBipolar Transistors - BJT SS SOT23 GP XSTR NPN
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-723-3-
Transistor PolarityNPNPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max45 V- 65 V-
Collector Base Voltage VCBO50 V- 80 V-
Emitter Base Voltage VEBO6 V- 5 V-
Collector Emitter Saturation Voltage0.6 V- 300 mV-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBC846ALT1BC856 SERIESBC846ALT1
DC Current Gain hFE Max450475 at - 2 mA, - 5 V-
PackagingReelReelReel
BrandON SemiconductorON SemiconductorON Semiconductor
Continuous Collector Current100 mA--
DC Collector/Base Gain hfe Min200220 at - 2 mA, - 5 V-
Pd Power Dissipation225 mW265 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
QualificationAEC-Q101AEC-Q101AEC-Q101
Factory Pack Quantity300080003000
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.000282 oz0.000045 oz-
Maximum DC Collector Current-- 100 mA-
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