NTB30N20G vs NTB30N20 vs NTB30N20T4

 
PartNumberNTB30N20GNTB30N20NTB30N20T4
DescriptionMOSFET 200V 30A N-ChannelMOSFET N-CH 200V 30A D2PAKMOSFET 200V 30A N-Channel
ManufacturerON SemiconductorMOT-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance68 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation214 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height4.83 mm--
Length10.29 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor--
Forward Transconductance Min20 S--
Fall Time24 ns, 88 ns--
Product TypeMOSFET--
Rise Time20 ns, 70 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns, 82 ns--
Typical Turn On Delay Time10 ns, 12 ns--
Unit Weight0.139332 oz--
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