NTTD1P02R2G vs NTTD1P02R2 vs NTTD1P02

 
PartNumberNTTD1P02R2GNTTD1P02R2NTTD1P02
DescriptionMOSFET -20V -1.45A P-ChannelMOSFET -20V -1.45A
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseMicro-8Micro-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current1.45 A1.45 A-
Rds On Drain Source Resistance160 mOhms160 mOhms-
Vgs Gate Source Voltage8 V8 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation500 mW (1/2 W)500 mW (1/2 W)-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height0.95 mm0.95 mm-
Length3 mm3 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
Transistor Type2 P-Channel2 P-Channel-
TypeMOSFETMOSFET-
Width3 mm3 mm-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min2.5 S2.5 S-
Fall Time20 ns, 30 ns20 ns, 30 ns-
Product TypeMOSFETMOSFET-
Rise Time20 ns, 30 ns20 ns, 30 ns-
Factory Pack Quantity40004000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time30 ns30 ns-
Typical Turn On Delay Time10 ns10 ns-
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