PSMN4R3-80ES,127 vs PSMN4R3-80PS,127 vs PSMN4R3-80ES

 
PartNumberPSMN4R3-80ES,127PSMN4R3-80PS,127PSMN4R3-80ES
DescriptionMOSFET N-Ch 80V 4.3 mOhmsMOSFET N-Ch 80V 4.3 mOhms
ManufacturerNexperiaNexperia-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseI2PAK-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V80 V-
Id Continuous Drain Current120 A120 A-
Rds On Drain Source Resistance4.3 mOhms4.3 mOhms-
Vgs th Gate Source Threshold Voltage3 V3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge104 nC104 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation306 W306 W-
ConfigurationSingleSingle-
PackagingTubeTube-
Transistor Type1 N-Channel1 N-Channel-
BrandNexperiaNexperia-
Product TypeMOSFETMOSFET-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.084199 oz0.211644 oz-
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