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PSMN4R3-80ES,127

PSMN4R3-80ES,127
Mfr. #:
PSMN4R3-80ES,127
Hersteller:
Nexperia
Beschreibung:
MOSFET N-Ch 80V 4.3 mOhms
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PSMN4R3-80ES,127 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PSMN4R3-80ES,127 DatasheetPSMN4R3-80ES,127 Datasheet (P4-P6)PSMN4R3-80ES,127 Datasheet (P7-P9)PSMN4R3-80ES,127 Datasheet (P10-P12)PSMN4R3-80ES,127 Datasheet (P13-P15)PSMN4R3-80ES,127 Datasheet (P16)
ECAD Model:
Mehr Informationen:
PSMN4R3-80ES,127 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Nexperia
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
I2PAK-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
4.3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
104 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
306 W
Aufbau:
Single
Verpackung:
Rohr
Transistortyp:
1 N-Channel
Marke:
Nexperia
Produktart:
MOSFET
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.084199 oz
Tags
PSMN4R3-80E, PSMN4R3-8, PSMN4R3, PSMN4, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PSMN4R3-80ES - N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
***et
Transistor MOSFET N-Channel 80V 120A 3-Pin TO-262
***et Europe
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
Teil # Mfg. Beschreibung Aktie Preis
PSMN4R3-80ES,127
DISTI # 1727-5280-ND		NexperiaMOSFET N-CH 80V 120A I2PAK
RoHS: Compliant
Min Qty: 5000
Container: Tube		Temporarily Out of Stock
  • 5000:$1.3913
PSMN4R3-80ES,127
DISTI # PSMN4R3-80ES,127		NexperiaTrans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: PSMN4R3-80ES,127)
RoHS: Compliant
Min Qty: 5000
Container: Tube		Americas - 0
  • 5000:$1.1900
  • 7000:$1.1900
  • 12000:$1.1900
  • 25000:$1.1900
  • 50000:$1.0900
PSMN4R3-80ES,127
DISTI # 771-PSMN4R380ES127		NexperiaMOSFET N-Ch 80V 4.3 mOhms
RoHS: Compliant		490
  • 1:$2.8700
  • 10:$2.4400
  • 100:$1.9500
  • 500:$1.7100
  • 1000:$1.4200
  • 2500:$1.3200
  • 5000:$1.2700
PSMN4R3-80ES127NXP SemiconductorsNow Nexperia PSMN4R3-80ES - Power Field-Effect Transistor, 120A I(D), 80V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Not Compliant		540
  • 1000:$1.2800
  • 500:$1.3400
  • 100:$1.4000
  • 25:$1.4600
  • 1:$1.5700
Bild Teil # Beschreibung
PSMN4R3-30PL,127

Mfr.#: PSMN4R3-30PL,127

OMO.#: OMO-PSMN4R3-30PL-127

 MOSFET N-CH 30V 4.3 mOhm Logic Level MOSFET
PSMN4R3-30BL,118

Mfr.#: PSMN4R3-30BL,118

OMO.#: OMO-PSMN4R3-30BL-118

 MOSFET Std N-chanMOSFET
PSMN4R3-80PS,127

Mfr.#: PSMN4R3-80PS,127

OMO.#: OMO-PSMN4R3-80PS-127-NEXPERIA

 MOSFET N-CH 80V 120A TO220AB
PSMN4R3-100PS

Mfr.#: PSMN4R3-100PS

OMO.#: OMO-PSMN4R3-100PS-1190

 - Bulk (Alt: PSMN4R3-100PS)
PSMN4R3-30BL118

Mfr.#: PSMN4R3-30BL118

OMO.#: OMO-PSMN4R3-30BL118-1190

 - Bulk (Alt: PSMN4R3-30BL118)
PSMN4R3-30PL127

Mfr.#: PSMN4R3-30PL127

OMO.#: OMO-PSMN4R3-30PL127-1190

 Now Nexperia PSMN4R3-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PSMN4R3-100PS,127

Mfr.#: PSMN4R3-100PS,127

OMO.#: OMO-PSMN4R3-100PS-127-NEXPERIA

 MOSFET N-Ch 100V 4.3 mo std level moSFET
PSMN4R3-80ES,127

Mfr.#: PSMN4R3-80ES,127

OMO.#: OMO-PSMN4R3-80ES-127-NEXPERIA

 MOSFET N-Ch 80V 4.3 mOhms
PSMN4R3-80ES127

Mfr.#: PSMN4R3-80ES127

OMO.#: OMO-PSMN4R3-80ES127-1190

 Now Nexperia PSMN4R3-80ES - Power Field-Effect Transistor, 120A I(D), 80V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
PSMN4R3-30BL,118

Mfr.#: PSMN4R3-30BL,118

OMO.#: OMO-PSMN4R3-30BL-118-NEXPERIA

 MOSFET N-CH 30V 100A D2PAK
Verfügbarkeit
Aktie:
490
Auf Bestellung:
2473
Menge eingeben:
Der aktuelle Preis von PSMN4R3-80ES,127 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,87 $
2,87 $
10
2,44 $
24,40 $
100
1,95 $
195,00 $
500
1,71 $
855,00 $
1000
1,42 $
1 420,00 $
2500
1,32 $
3 300,00 $
5000
1,27 $
6 350,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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