 |  |  | |
| PartNumber | PSMN4R3-30BL,118 | PSMN4R3-100ES,127 | PSMN4R3-100PS,127 |
| Description | MOSFET Std N-chanMOSFET | MOSFET N-Ch 100V 4.3 m std level MOSFET | MOSFET N-Ch 100V 4.3 mo std level moSFET |
| Manufacturer | Nexperia | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | Through Hole | Through Hole |
| Package / Case | TO-263-3 | I2PAK-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 100 V | 100 V |
| Id Continuous Drain Current | 80 A | 120 A | 120 A |
| Rds On Drain Source Resistance | 4.1 mOhms | 4.3 mOhms | 4.3 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 103 W | 338 W | 338 W |
| Configuration | Single | Single | Single |
| Packaging | Reel | Tube | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Nexperia | Nexperia | Nexperia |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 800 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.139332 oz | 0.084199 oz | 0.211644 oz |
| Qg Gate Charge | - | 170 nC | 170 nC |
| Fall Time | - | 63 ns | 63 ns |
| Rise Time | - | 91 ns | 91 ns |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PSMN4R3-30PL,127 | MOSFET N-CH 30V 4.3 mOhm Logic Level MOSFET | |
| PSMN4R3-30BL,118 | MOSFET Std N-chanMOSFET | ||
| PSMN4R3-100ES,127 | MOSFET N-Ch 100V 4.3 m std level MOSFET | ||
| PSMN4R3-80ES,127 | MOSFET N-Ch 80V 4.3 mOhms | ||
| PSMN4R3-100PS,127 | MOSFET N-Ch 100V 4.3 mo std level moSFET | ||
| PSMN4R3-80PS,127 | MOSFET N-Ch 80V 4.3 mOhms | ||
| PSMN4R3-100ES,127 | MOSFET N-CH 100V 120A I2PAK | ||
| PSMN4R3-30PL,127 | MOSFET N-CH 30V 100A TO220AB | ||
| PSMN4R3-80PS,127 | MOSFET N-CH 80V 120A TO220AB | ||
| PSMN4R3-100PS,127 | MOSFET N-Ch 100V 4.3 mo std level moSFET | ||
| PSMN4R3-80ES,127 | MOSFET N-Ch 80V 4.3 mOhms | ||
| PSMN4R3-30BL,118 | MOSFET N-CH 30V 100A D2PAK | ||
| PSMN4R3-100PS | - Bulk (Alt: PSMN4R3-100PS) | ||
| PSMN4R3-100PS/ES | Neu und Original | ||
| PSMN4R3-100PS127 | Neu und Original | ||
| PSMN4R3-30BL118 | - Bulk (Alt: PSMN4R3-30BL118) | ||
| PSMN4R3-30PL | MOSFET,N CH,30V,100A,TO-220AB | ||
| PSMN4R3-30PL127 | Now Nexperia PSMN4R3-30PL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| PSMN4R3-80ES | Neu und Original | ||
| PSMN4R3-80PS127 | Now Nexperia PSMN4R3-80PS - Power Field-Effect Transistor, 120A I(D), 80V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| PSMN4R3-80ES127 | Now Nexperia PSMN4R3-80ES - Power Field-Effect Transistor, 120A I(D), 80V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |