R8002ANJFRGTL vs R8002ANX vs R8002ANJ

 
PartNumberR8002ANJFRGTLR8002ANXR8002ANJ
DescriptionMOSFET Nch 800V Vdss 2A ID TO-263(D2PAK); LPTSMOSFET 10V Drive Nch MOSFET
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
Mounting StyleSMD/SMTThrough Hole-
Package / CaseTO-263S-3TO-220FP-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage800 V800 V-
Id Continuous Drain Current2 A2 A-
Rds On Drain Source Resistance4.3 Ohms4.3 Ohms-
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge13 nC12.7 nC-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation62 W35 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelBulk-
Transistor Type1 N-Channel1 N-Channel-
BrandROHM SemiconductorROHM Semiconductor-
Forward Transconductance Min0.5 S--
Fall Time70 ns70 ns-
Product TypeMOSFETMOSFET-
Rise Time25 ns20 ns-
Factory Pack Quantity1000500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time35 ns33 ns-
Typical Turn On Delay Time20 ns17 ns-
Technology-Si-
Series-R8002ANX-
Part # Aliases-R8002ANX-
Unit Weight-0.211644 oz-
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