SI4834CDY-T1-GE3 vs SI4834CDY-T1-E3 vs SI4834CDY

 
PartNumberSI4834CDY-T1-GE3SI4834CDY-T1-E3SI4834CDY
DescriptionMOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3RF Bipolar Transistors MOSFET 30V 8.0A 2.9W 20mohm @ 10V
ManufacturerVishayVishay SiliconixVISHAY
Product CategoryMOSFETFETs - ArraysFETs - Arrays
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8--
TradenameTrenchFET--
PackagingReelTape & Reel (TR)-
SeriesSI4TrenchFETR-
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesSI4834CDY-GE3--
Unit Weight0.017870 oz0.006596 oz-
Part Aliases-SI4834CDY-E3-
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Number of Channels-2 Channel-
Supplier Device Package-8-SO-
Configuration-Dual with Schottky Diode-
FET Type-2 N-Channel (Dual)-
Power Max-2.9W-
Transistor Type-2 N-Channel-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-950pF @ 15V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-8A-
Rds On Max Id Vgs-20 mOhm @ 8A, 10V-
Vgs th Max Id-3V @ 1mA-
Gate Charge Qg Vgs-25nC @ 10V-
Pd Power Dissipation-2 W-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Fall Time-10 ns-
Rise Time-12 ns-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-7.5 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-20 mOhms-
Transistor Polarity-N-Channel-
Typical Turn Off Delay Time-19 ns 18 ns-
Typical Turn On Delay Time-17 ns-
Channel Mode-Enhancement-
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