SI8499DB-T2-E1 vs SI8497DB-T2-E1 vs SI8499DB

 
PartNumberSI8499DB-T2-E1SI8497DB-T2-E1SI8499DB
DescriptionMOSFET -20V Vds 12V Vgs MICRO FOOT 1.5 x 1MOSFET -30V Vds 12V Vgs MICRO FOOT 1.5 x 1
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseMicroFoot-6MicroFoot-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V30 V-
Id Continuous Drain Current16 A13 A-
Rds On Drain Source Resistance26 mOhms43 mOhms-
Vgs th Gate Source Threshold Voltage1.3 V1.1 V-
Vgs Gate Source Voltage12 V12 V-
Qg Gate Charge30 nC49 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation13 W13 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSI8SI8-
Transistor Type1 P-Channel1 P-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min10 S10 S-
Fall Time30 ns25 ns-
Product TypeMOSFETMOSFET-
Rise Time25 ns15 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time50 ns60 ns-
Typical Turn On Delay Time20 ns17 ns-
Unit Weight0.004233 oz--
Height-0.6 mm-
Length-2.36 mm-
Width-1.56 mm-
Top