PartNumber | SI8499DB-T2-E1 | SI8497DB-T2-E1 | SI8499DB |
Description | MOSFET -20V Vds 12V Vgs MICRO FOOT 1.5 x 1 | MOSFET -30V Vds 12V Vgs MICRO FOOT 1.5 x 1 | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | MicroFoot-6 | MicroFoot-6 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 30 V | - |
Id Continuous Drain Current | 16 A | 13 A | - |
Rds On Drain Source Resistance | 26 mOhms | 43 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.3 V | 1.1 V | - |
Vgs Gate Source Voltage | 12 V | 12 V | - |
Qg Gate Charge | 30 nC | 49 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 13 W | 13 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | - |
Series | SI8 | SI8 | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 10 S | 10 S | - |
Fall Time | 30 ns | 25 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 25 ns | 15 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 50 ns | 60 ns | - |
Typical Turn On Delay Time | 20 ns | 17 ns | - |
Unit Weight | 0.004233 oz | - | - |
Height | - | 0.6 mm | - |
Length | - | 2.36 mm | - |
Width | - | 1.56 mm | - |