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SI8497DB-T2-E1

SI8497DB-T2-E1
Mfr. #:
SI8497DB-T2-E1
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -30V Vds 12V Vgs MICRO FOOT 1.5 x 1
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI8497DB-T2-E1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI8497DB-T2-E1 DatasheetSI8497DB-T2-E1 Datasheet (P4-P6)SI8497DB-T2-E1 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SI8497DB-T2-E1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
MicroFoot-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
13 A
Rds On - Drain-Source-Widerstand:
43 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.1 V
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
49 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
13 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
0.6 mm
Länge:
2.36 mm
Serie:
SI8
Transistortyp:
1 P-Channel
Breite:
1.56 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
10 S
Abfallzeit:
25 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
60 ns
Typische Einschaltverzögerungszeit:
17 ns
Tags
SI849, SI84, SI8
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 30V 5.9A 6-Pin Micro Foot T/R
*** Europe
P-CH SINGLE -30V MICROFOOT
***
30V P-CHANNEL (D-S)
Si84x7DB 30V P-Channel TrenchFET Gen III MOSFETs
Vishay Siliconix's Si84x7DB 30V P-Channel TrenchFET Gen III MOSFETs set new benchmarks for size and on-resistance. The new Si8497DB is the industry's first 30V chipscale MOSFET in the compact 1 mm by 1.5 mm size, making it the smallest such device on the market, while the Si8487DB provides the lowest on-resistance available for a 30V chipscale device in the 1.6 mm by 1.6 mm form factor. Vishay's TrenchFET Gen III P-channel technology uses advanced process techniques to pack one billion transistor cells into each square inch of silicon. The Si8497DB and Si8487DB will be used for load, battery, and charger switching in handheld devices including smart phones, tablets, point-of-sale (POS) devices, and mobile computing.View entire Vishay Siliconix Power MOSFETs
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SI8497DB-T2-E1
DISTI # V72:2272_09216577		Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.9A 6-Pin Micro Foot T/R
RoHS: Compliant		995
  • 500:$0.2806
  • 250:$0.3074
  • 100:$0.3415
  • 25:$0.4120
  • 10:$0.5034
  • 1:$0.6598
SI8497DB-T2-E1
DISTI # V36:1790_09216577		Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.9A 6-Pin Micro Foot T/R
RoHS: Compliant		0
  • 3000000:$0.1745
  • 1500000:$0.1747
  • 300000:$0.1866
  • 30000:$0.2053
  • 3000:$0.2083
SI8497DB-T2-E1
DISTI # SI8497DB-T2-E1CT-ND		Vishay SiliconixMOSFET P-CH 30V 13A MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4998In Stock
  • 1000:$0.2353
  • 500:$0.3046
  • 100:$0.3876
  • 10:$0.5190
  • 1:$0.6100
SI8497DB-T2-E1
DISTI # SI8497DB-T2-E1DKR-ND		Vishay SiliconixMOSFET P-CH 30V 13A MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4998In Stock
  • 1000:$0.2353
  • 500:$0.3046
  • 100:$0.3876
  • 10:$0.5190
  • 1:$0.6100
SI8497DB-T2-E1
DISTI # SI8497DB-T2-E1TR-ND		Vishay SiliconixMOSFET P-CH 30V 13A MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.1720
  • 15000:$0.1814
  • 6000:$0.1949
  • 3000:$0.2083
SI8497DB-T2-E1
DISTI # 25790150		Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.9A 6-Pin Micro Foot T/R
RoHS: Compliant		995
  • 500:$0.2806
  • 250:$0.3074
  • 100:$0.3415
  • 39:$0.4120
SI8497DB-T2-E1
DISTI # SI8497DB-T2-E1		Vishay IntertechnologiesTrans MOSFET P-CH 30V 5.9A 6-Pin Micro Foot T/R - Tape and Reel (Alt: SI8497DB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1639
  • 18000:$0.1679
  • 12000:$0.1729
  • 6000:$0.1799
  • 3000:$0.1859
SI8497DB-T2-E1
DISTI # 94T2855		Vishay IntertechnologiesMOSFET, P CH, -30V, -13A, MICRO FOOT-6, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-13A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:-4.5V,No. of Pins:6Pins RoHS Compliant: Yes0
  • 50000:$0.1660
  • 30000:$0.1730
  • 20000:$0.1860
  • 10000:$0.1990
  • 5000:$0.2150
  • 1:$0.2210
SI8497DB-T2-E1
DISTI # 94T2854		Vishay IntertechnologiesMOSFET, P CHANNEL, -30V, -13A, MICRO FOOT-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-13A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-500mVRoHS Compliant: Yes0
  • 2500:$0.2210
  • 1000:$0.2780
  • 500:$0.3170
  • 250:$0.3690
  • 100:$0.4150
  • 50:$0.4690
  • 25:$0.5150
  • 1:$0.5740
SI8497DB-T2-E1
DISTI # 78-SI8497DB-T2-E1		Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs MICRO FOOT 1.5 x 1
RoHS: Compliant		0
  • 1:$0.6000
  • 10:$0.4620
  • 100:$0.3430
  • 500:$0.2810
  • 1000:$0.2170
  • 3000:$0.1980
  • 6000:$0.1850
  • 9000:$0.1720
  • 24000:$0.1630
SI8497DB-T2-E1Vishay Intertechnologies 3000
    SI8497DBT2E1Vishay Intertechnologies 
    RoHS: Compliant    		3000
      SI8497DB-T2-E1Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs MICRO FOOT 1.5 x 1
      RoHS: Compliant      		Americas -
        Bild Teil # Beschreibung
        SI8497DB-T2-E1

        Mfr.#: SI8497DB-T2-E1

        OMO.#: OMO-SI8497DB-T2-E1

        		 MOSFET -30V Vds 12V Vgs MICRO FOOT 1.5 x 1
        SI8497DB-T2-E1

        Mfr.#: SI8497DB-T2-E1

        OMO.#: OMO-SI8497DB-T2-E1-VISHAY

        		 Trans MOSFET P-CH 30V 5.9A 6-Pin Micro Foot T/R
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        3000
        Menge eingeben:
        Der aktuelle Preis von SI8497DB-T2-E1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,60 $
        0,60 $
        10
        0,46 $
        4,62 $
        100
        0,34 $
        34,30 $
        500
        0,28 $
        140,50 $
        1000
        0,22 $
        217,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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