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| PartNumber | SI8499DB-T2-E1 | SI8497DB-T2-E1 |
| Description | MOSFET -20V Vds 12V Vgs MICRO FOOT 1.5 x 1 | MOSFET -30V Vds 12V Vgs MICRO FOOT 1.5 x 1 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | MicroFoot-6 | MicroFoot-6 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 30 V |
| Id Continuous Drain Current | 16 A | 13 A |
| Rds On Drain Source Resistance | 26 mOhms | 43 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.3 V | 1.1 V |
| Vgs Gate Source Voltage | 12 V | 12 V |
| Qg Gate Charge | 30 nC | 49 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 13 W | 13 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SI8 | SI8 |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 10 S | 10 S |
| Fall Time | 30 ns | 25 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 25 ns | 15 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 50 ns | 60 ns |
| Typical Turn On Delay Time | 20 ns | 17 ns |
| Unit Weight | 0.004233 oz | - |
| Height | - | 0.6 mm |
| Length | - | 2.36 mm |
| Width | - | 1.56 mm |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI8499DB-T2-E1 | MOSFET -20V Vds 12V Vgs MICRO FOOT 1.5 x 1 | |
| SI8497DB-T2-E1 | MOSFET -30V Vds 12V Vgs MICRO FOOT 1.5 x 1 | ||
Vishay |
SI8499DB-T2-E1 | IGBT Transistors MOSFET -20V [email protected] 16A P-Ch G-III | |
| SI8497DB-T2-E1 | Trans MOSFET P-CH 30V 5.9A 6-Pin Micro Foot T/R | ||
| SI8499DB | Neu und Original |