PartNumber | SIHD3N50D-E3 | SIHD3N50D | SIHD3N50D FQD3N59C |
Description | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | ||
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Id Continuous Drain Current | 3 A | - | - |
Rds On Drain Source Resistance | 3.2 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 5 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 6 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 69 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Height | 2.38 mm | - | - |
Length | 6.73 mm | - | - |
Series | D | - | - |
Width | 6.22 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Fall Time | 13 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 9 ns | - | - |
Factory Pack Quantity | 75 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 11 ns | - | - |
Typical Turn On Delay Time | 12 ns | - | - |
Unit Weight | 0.011993 oz | - | - |