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| PartNumber | SIHFR1N60ATR-GE3 | SIHFR1N60A-GE3 | SIHFR1N60A |
| Description | MOSFET 600V Vds 30V Vgs DPAK (TO-252) | MOSFET 600V Vds TO-252 DPAK | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 1.4 A | 1.4 A | - |
| Rds On Drain Source Resistance | 7 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 14 nC | 14 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 36 W | 36 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Height | 2.38 mm | 2.38 mm | - |
| Length | 6.73 mm | 6.73 mm | - |
| Series | SIHFR | SIHFR | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 0.88 S | 0.88 S | - |
| Fall Time | 20 ns | 20 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 14 ns | 14 ns | - |
| Factory Pack Quantity | 1 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 18 ns | 18 ns | - |
| Typical Turn On Delay Time | 9.8 ns | 9.8 ns | - |
| Packaging | - | Reel | - |
| Unit Weight | - | 0.011993 oz | - |