SIHG44N65EF-GE3 vs SIHG460B-GE3 vs SIHG40N60E-GE3

 
PartNumberSIHG44N65EF-GE3SIHG460B-GE3SIHG40N60E-GE3
DescriptionMOSFET 650V Vds 30V Vgs TO-247ACMOSFET 500V 250mOhm@10V 20A N-Ch D-SRSMOSFET 600V Vds 30V Vgs TO-247AC
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247AC-3TO-247AC-3TO-247AC-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V500 V600 V
Id Continuous Drain Current46 A20 A40 A
Rds On Drain Source Resistance63 mOhms250 mOhms65 mOhms
Vgs th Gate Source Threshold Voltage4 V4 V4 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge185 nC85 nC131 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation417 W278 W329 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeBulkTube
Height20.82 mm20.82 mm-
Length15.87 mm15.87 mm-
SeriesSIHDE
Width5.31 mm5.31 mm-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time100 ns56 ns66 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time77 ns31 ns71 ns
Factory Pack Quantity500500500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time157 ns117 ns127 ns
Typical Turn On Delay Time46 ns24 ns35 ns
Unit Weight0.211644 oz1.340411 oz0.211644 oz
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