SIS322DNT-T1-GE3 vs SIS328MX(C1) vs SIS328VXC1

 
PartNumberSIS322DNT-T1-GE3SIS328MX(C1)SIS328VXC1
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK 1212-8S
ManufacturerVishay--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-1212-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current38.3 A--
Rds On Drain Source Resistance6 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V, - 16 V--
Qg Gate Charge21.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation19.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
Height1.04 mm--
Length3.3 mm--
SeriesSIS--
Transistor Type1 N-Channel--
Width3.3 mm--
BrandVishay / Siliconix--
Forward Transconductance Min54 S--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time15 ns--
Top