SIS322DNT-T1-GE3

SIS322DNT-T1-GE3
Mfr. #:
SIS322DNT-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8S
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIS322DNT-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIS322DNT-T1-GE3 DatasheetSIS322DNT-T1-GE3 Datasheet (P4-P6)SIS322DNT-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIS322DNT-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
38.3 A
Rds On - Drain-Source-Widerstand:
6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V, - 16 V
Qg - Gate-Ladung:
21.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
19.8 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
3.3 mm
Serie:
SIS
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
54 S
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
15 ns
Typische Einschaltverzögerungszeit:
15 ns
Tags
SIS32, SIS3, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***v
    A***v
    RU

    Excellent matrix, everything works! Shipping fast

    2019-03-30
    A***o
    A***o
    UA

    Be healthy!

    2019-01-18
    M***i
    M***i
    RU

    The description corresponds.

    2019-05-14
***et Europe
Trans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R
***ark
N-Ch PowerPAK1212-8-Thin BWL 30V Gen4 7.5/12 mohm@10V/4.5V
***
30V N-CHANNEL
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIS322DNT-T1-GE3
DISTI # V36:1790_09216134
Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK EP
RoHS: Compliant
0
  • 3000000:$0.2182
  • 1500000:$0.2183
  • 300000:$0.2235
  • 30000:$0.2309
  • 3000:$0.2320
SIS322DNT-T1-GE3
DISTI # SIS322DNT-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 38.3A 1212-8
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    SIS322DNT-T1-GE3
    DISTI # SIS322DNT-T1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CH 30V 38.3A 1212-8
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      SIS322DNT-T1-GE3
      DISTI # SIS322DNT-T1-GE3TR-ND
      Vishay SiliconixMOSFET N-CH 30V 38.3A 1212-8
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$0.2320
      SIS322DNT-T1-GE3
      DISTI # SIS322DNT-T1-GE3
      Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R (Alt: SIS322DNT-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Asia - 0
        SIS322DNT-T1-GE3
        DISTI # SIS322DNT-T1-GE3
        Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R (Alt: SIS322DNT-T1-GE3)
        Min Qty: 3000
        Container: Tape and Reel
        Europe - 0
          SIS322DNT-T1-GE3
          DISTI # SIS322DNT-T1-GE3
          Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS322DNT-T1-GE3)
          RoHS: Compliant
          Min Qty: 3000
          Container: Reel
          Americas - 0
            SIS322DNT-T1-GE3
            DISTI # 68W7091
            Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R - Product that comes on tape, but is not reeled (Alt: 68W7091)
            RoHS: Compliant
            Min Qty: 1
            Container: Ammo Pack
            Americas - 0
              SIS322DNT-T1-GE3
              DISTI # 68W7091
              Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 38.3A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:38.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes
              RoHS: Compliant
              0
              • 1000:$0.2560
              • 500:$0.3200
              • 250:$0.3540
              • 100:$0.3880
              • 50:$0.4500
              • 25:$0.5110
              • 1:$0.6300
              SIS322DNT-T1-GE3
              DISTI # 68W7092
              Vishay IntertechnologiesMOSFET, N CH, 30V, 38.3A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:38.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes
              RoHS: Compliant
              0
              • 50000:$0.2070
              • 30000:$0.2160
              • 20000:$0.2320
              • 10000:$0.2480
              • 5000:$0.2690
              • 1:$0.2760
              SIS322DNT-T1-GE3
              DISTI # 78-SIS322DNT-T1-GE3
              Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8S
              RoHS: Compliant
              4685
              • 1:$0.6300
              • 10:$0.5110
              • 100:$0.3880
              • 500:$0.3200
              • 1000:$0.2690
              • 3000:$0.2340
              • 9000:$0.2320
              • 24000:$0.2190
              SIS322DNT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8SAmericas -
                SIS322DNT-T1-GE3
                DISTI # 2459340
                Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 38.3A, POWERPAK
                RoHS: Compliant
                1559
                • 3000:$0.3500
                • 1000:$0.3860
                • 500:$0.4820
                • 100:$0.5850
                • 10:$0.7700
                • 1:$0.9490
                SIS322DNT-T1-GE3
                DISTI # 2291554
                Vishay IntertechnologiesMOSFET, N-CH, 30V, DS, PWR PK 1212-8
                RoHS: Compliant
                1559
                • 6000:£0.1630
                • 3000:£0.1810
                • 500:£0.2020
                • 250:£0.2490
                • 100:£0.2960
                • 25:£0.4110
                • 1:£0.4480
                Bild Teil # Beschreibung
                ZXMS6004DN8-13

                Mfr.#: ZXMS6004DN8-13

                OMO.#: OMO-ZXMS6004DN8-13

                MOSFET Dual 60V N-Ch FET 500mOhm 1.3A 120mJ
                G80SC-SM-501

                Mfr.#: G80SC-SM-501

                OMO.#: OMO-G80SC-SM-501

                ARM Microcontrollers - MCU G80 SOC .net MICRO FRAMEWORK
                VNH5050A-E

                Mfr.#: VNH5050A-E

                OMO.#: OMO-VNH5050A-E

                Motor / Motion / Ignition Controllers & Drivers Automotive H-Bridge 50mOhm 30A 41V VCC
                TCNL476M016R0250

                Mfr.#: TCNL476M016R0250

                OMO.#: OMO-TCNL476M016R0250

                Tantalum Capacitors - Polymer SMD 16V 47uF 20% 1210 ESR=250mOhm
                ZXMS6004DN8-13

                Mfr.#: ZXMS6004DN8-13

                OMO.#: OMO-ZXMS6004DN8-13-DIODES

                MOSFET N-CH 60V 1.3A SO8
                XC6201P252MR-G

                Mfr.#: XC6201P252MR-G

                OMO.#: OMO-XC6201P252MR-G-TOREX-SEMICONDUCTOR

                LDO Voltage Regulators 10V Three Terminals Voltage Regulato
                MCP96RL00-E/MX

                Mfr.#: MCP96RL00-E/MX

                OMO.#: OMO-MCP96RL00-E-MX-MICROCHIP-TECHNOLOGY

                +/- 8.0C Thermocouple to I2C converter in 5mmx5mm QFN. This device supports K, J, T, N, S, E, B, and
                TCNL476M016R0250

                Mfr.#: TCNL476M016R0250

                OMO.#: OMO-TCNL476M016R0250-AVX

                Cap Tant Polymer 47uF 16VDC L CASE 20% (3.5 X 2.8 X 1mm) Undertab SMD 3528-10 0.25 Ohm 85C T/R
                DRV8301DCAR

                Mfr.#: DRV8301DCAR

                OMO.#: OMO-DRV8301DCAR-TEXAS-INSTRUMENTS

                Motor / Motion / Ignition Controllers & Drivers 3-PHASE BRUSHLESS MOTOR PRE-DRIVER
                NCP718ASN330T1G

                Mfr.#: NCP718ASN330T1G

                OMO.#: OMO-NCP718ASN330T1G-ON-SEMICONDUCTOR

                300 MA LOW IQ WIDE INPUT
                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                1988
                Menge eingeben:
                Der aktuelle Preis von SIS322DNT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
                Referenzpreis (USD)
                Menge
                Stückpreis
                ext. Preis
                1
                0,63 $
                0,63 $
                10
                0,51 $
                5,11 $
                100
                0,39 $
                38,80 $
                500
                0,32 $
                160,00 $
                1000
                0,26 $
                256,00 $
                Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
                Beginnen mit
                Neueste Produkte
                Top