SISB46DN-T1-GE3 vs SISB46DN

 
PartNumberSISB46DN-T1-GE3SISB46DN
DescriptionMOSFET 40V Vds 20V Vgs PowerPAK 1212-8
ManufacturerVishay-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleSMD/SMT-
Package / CasePowerPAK-1212-8-
Number of Channels2 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage40 V-
Id Continuous Drain Current34 A-
Rds On Drain Source Resistance11.71 mOhms-
Vgs th Gate Source Threshold Voltage1.1 V-
Vgs Gate Source Voltage- 16 V, 20 V-
Qg Gate Charge22 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation23 W-
ConfigurationDual-
Channel ModeEnhancement-
TradenameTrenchFET, PowerPAK-
PackagingReel-
Height1.04 mm-
Length3.3 mm-
SeriesSIS-
Transistor Type2 N-Channel-
Width3.3 mm-
BrandVishay / Siliconix-
Forward Transconductance Min52 S-
Fall Time27 ns-
Product TypeMOSFET-
Rise Time56 ns-
Factory Pack Quantity3000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time13 ns-
Typical Turn On Delay Time16 ns-
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