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| PartNumber | SPB80P06P G | SPB80P06PGATMA1 | SPB80P06PGBTS100 |
| Description | MOSFET P-Ch -60V 80A D2PAK-2 | MOSFET P-Ch -60V 80A D2PAK-2 | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 80 A | 80 A | - |
| Rds On Drain Source Resistance | 23 mOhms | 21 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 4 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 115 nC | 173 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 340 W | 340 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | SIPMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | SPB80P06 | XPB80P06 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 18 S | 18 S | - |
| Fall Time | 30 ns | 30 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 18 ns | 18 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 56 ns | 56 ns | - |
| Typical Turn On Delay Time | 24 ns | 24 ns | - |
| Part # Aliases | SP000096088 SPB80P06PGATMA1 SPB8P6PGXT | G SP000096088 SPB80P06P SPB8P6PGXT | - |
| Unit Weight | 0.139332 oz | 0.068654 oz | - |