SPB80P06PGATMA1

SPB80P06PGATMA1
Mfr. #:
SPB80P06PGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET P-Ch -60V 80A D2PAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SPB80P06PGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
21 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
173 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
340 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
XPB80P06
Transistortyp:
1 P-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
18 S
Abfallzeit:
30 ns
Produktart:
MOSFET
Anstiegszeit:
18 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
56 ns
Typische Einschaltverzögerungszeit:
24 ns
Teil # Aliase:
G SP000096088 SPB80P06P SPB8P6PGXT
Gewichtseinheit:
0.068654 oz
Tags
SPB80P06PG, SPB80P, SPB8, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 60 V 23 mOhm 115 nC SIPMOS® Power Mosfet - D2PAK
***ow.cn
Trans MOSFET P-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, P-CH, 60V, 80A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:340W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
Teil # Mfg. Beschreibung Aktie Preis
SPB80P06PGATMA1
DISTI # SPB80P06PGATMA1CT-ND
Infineon Technologies AGMOSFET P-CH 60V 80A TO-263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1926In Stock
  • 500:$2.3508
  • 100:$2.9031
  • 10:$3.5400
  • 1:$3.9700
SPB80P06PGATMA1
DISTI # SPB80P06PGATMA1DKR-ND
Infineon Technologies AGMOSFET P-CH 60V 80A TO-263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1926In Stock
  • 500:$2.3508
  • 100:$2.9031
  • 10:$3.5400
  • 1:$3.9700
SPB80P06PGATMA1
DISTI # SPB80P06PGATMA1TR-ND
Infineon Technologies AGMOSFET P-CH 60V 80A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 1000:$1.9248
SPB80P06PGATMA1
DISTI # SP000096088
Infineon Technologies AGTrans MOSFET P-CH 60V 80A 3-Pin TO-263 T/R (Alt: SP000096088)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€2.4900
  • 2000:€1.8900
  • 4000:€1.5900
  • 6000:€1.4900
  • 10000:€1.3900
SPB80P06PG
DISTI # SPB80P06PGATMA1
Infineon Technologies AGTrans MOSFET SIPMOS P-CH -60V -80A 3-Pin(2+tab) TO-263 T/R - Tape and Reel (Alt: SPB80P06PGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.3900
  • 2000:$1.2900
  • 4000:$1.2900
  • 6000:$1.1900
  • 10000:$1.1900
SPB80P06PGATMA1
DISTI # 47W3754
Infineon Technologies AGMOSFET, P CHANNEL, 60V, 80A, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-80A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.021ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V , RoHS Compliant: Yes0
  • 1:$3.3100
  • 10:$2.8200
  • 25:$2.6900
  • 50:$2.5700
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
SPB80P06PGATMA1.
DISTI # 30AC0654
Infineon Technologies AGSMALL SIGNAL+P-CH , ROHS COMPLIANT: YES0
  • 1:$1.3900
  • 2000:$1.2900
  • 6000:$1.1900
SPB80P06P G
DISTI # 726-SPB80P06PG
Infineon Technologies AGMOSFET P-Ch -60V 80A D2PAK-2
RoHS: Compliant
2156
  • 1:$3.3100
  • 10:$2.8200
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
  • 1000:$1.7500
SPB80P06PGATMA1
DISTI # 726-SPB80P06PGATMA1
Infineon Technologies AGMOSFET P-Ch -60V 80A D2PAK-2
RoHS: Compliant
754
  • 1:$3.3100
  • 10:$2.8200
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
  • 1000:$1.7500
SPB80P06PGATMA1
DISTI # 7533166
Infineon Technologies AGMOSFET P-CHANNEL 60V 80A SIPMOS TO263, EA377
  • 1:£2.4400
  • 10:£1.5700
  • 50:£1.4400
  • 250:£1.3600
  • 500:£1.3200
SPB80P06PGATMA1
DISTI # 7533166P
Infineon Technologies AGMOSFET P-CHANNEL 60V 80A SIPMOS TO263, RL5444
  • 10:£1.5700
  • 50:£1.4400
  • 250:£1.3600
  • 500:£1.3200
SPB80P06PGATMA1
DISTI # 2212850
Infineon Technologies AGMOSFET, P-CH, 60V, 80A, TO-263
RoHS: Compliant
0
  • 1:£2.4600
  • 10:£1.4500
  • 100:£1.4400
  • 250:£1.4300
  • 500:£1.4100
SPB80P06PGATMA1
DISTI # 2212850
Infineon Technologies AGMOSFET, P-CH, 60V, 80A, TO-263
RoHS: Compliant
0
  • 1:$5.2400
  • 10:$4.4700
  • 100:$3.8700
  • 250:$3.6800
  • 500:$3.2900
  • 1000:$2.9900
SPB80P06PGATMA1
DISTI # 2212850RL
Infineon Technologies AGMOSFET, P-CH, 60V, 80A, TO-263
RoHS: Compliant
0
  • 1:$5.2400
  • 10:$4.4700
  • 100:$3.8700
  • 250:$3.6800
  • 500:$3.2900
  • 1000:$2.9900
Bild Teil # Beschreibung
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Gate Drivers 40V 7-CH Lo side DVR
MAX7301AAX+

Mfr.#: MAX7301AAX+

OMO.#: OMO-MAX7301AAX-

Interface - I/O Expanders 2.5-5.5V 20/28 Port I/O Expander
C1608X7S0J106M080AC

Mfr.#: C1608X7S0J106M080AC

OMO.#: OMO-C1608X7S0J106M080AC

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 6.3V 10uF X7S 20% T: 0.8mm
TPL7407LDR

Mfr.#: TPL7407LDR

OMO.#: OMO-TPL7407LDR-TEXAS-INSTRUMENTS

Gate Drivers 40V 7-CH Lo side DVR
EYG-T7070A10A

Mfr.#: EYG-T7070A10A

OMO.#: OMO-EYG-T7070A10A-PANASONIC

Thrml Mgmt Access Thermal Pad Black 13W/m.K 4X10e6Ohm.cm Automotive
ASDMB-125.000MHZ-XY-T

Mfr.#: ASDMB-125.000MHZ-XY-T

OMO.#: OMO-ASDMB-125-000MHZ-XY-T-ABRACON

Standard Clock Oscillators 125MHz 10ppm -40C +105C
CGA3E2X7R1H104K080AA

Mfr.#: CGA3E2X7R1H104K080AA

OMO.#: OMO-CGA3E2X7R1H104K080AA-1105

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 0.1uF 50volts X7R 10% T=0.8mm
C1608X7S0J106M080AC

Mfr.#: C1608X7S0J106M080AC

OMO.#: OMO-C1608X7S0J106M080AC-TDK

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 10uF 6.3volts X7S +/-20% GP
GRT31CR61H106KE01L

Mfr.#: GRT31CR61H106KE01L

OMO.#: OMO-GRT31CR61H106KE01L-MURATA-ELECTRONICS

Cap Ceramic 10uF 50V X5R 10% Pad SMD 1206 85C Automotive T/R
GRM21BR61A476ME15L

Mfr.#: GRM21BR61A476ME15L

OMO.#: OMO-GRM21BR61A476ME15L-MURATA-ELECTRONICS

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 47uF 10volts X5R + - 20%
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von SPB80P06PGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
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Stückpreis
ext. Preis
1
3,30 $
3,30 $
10
2,81 $
28,10 $
100
2,43 $
243,00 $
250
2,31 $
577,50 $
500
2,07 $
1 035,00 $
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