 | |  | |
| PartNumber | SPB80P06P G | SPB80P06PGATMA1 | SPB80P06P |
| Description | MOSFET P-Ch -60V 80A D2PAK-2 | MOSFET P-Ch -60V 80A D2PAK-2 | MOSFET P-CH 60V 80A D2PAK |
| Manufacturer | Infineon | Infineon | INFINEON |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | MOSFET (Metal Oxide) |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3, DPak (2 Leads + Tab), TO-263AB |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 80 A | 80 A | - |
| Rds On Drain Source Resistance | 23 mOhms | 21 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 4 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 115 nC | 173 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 340 W | 340 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | SIPMOS | - | - |
| Packaging | Reel | Reel | Tape & Reel (TR) |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | SPB80P06 | XPB80P06 | SIPMOS |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 18 S | 18 S | - |
| Fall Time | 30 ns | 30 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 18 ns | 18 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 56 ns | 56 ns | - |
| Typical Turn On Delay Time | 24 ns | 24 ns | - |
| Part # Aliases | SP000096088 SPB80P06PGATMA1 SPB8P6PGXT | G SP000096088 SPB80P06P SPB8P6PGXT | - |
| Unit Weight | 0.139332 oz | 0.068654 oz | - |
| Part Status | - | - | Obsolete |
| FET Type | - | - | P-Channel |
| Drain to Source Voltage (Vdss) | - | - | 60V |
| Current Continuous Drain (Id) @ 25°C | - | - | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | - | 10V |
| Vgs(th) (Max) @ Id | - | - | 4V @ 5.5mA |
| Gate Charge (Qg) (Max) @ Vgs | - | - | 173nC @ 10V |
| Vgs (Max) | - | - | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | 5033pF @ 25V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | - | 340W (Tc) |
| Rds On (Max) @ Id, Vgs | - | - | 23 mOhm @ 64A, 10V |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PG-TO263-3-2 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
SPB80P06P G | MOSFET P-Ch -60V 80A D2PAK-2 | |
| SPB80P06PGATMA1 | MOSFET P-Ch -60V 80A D2PAK-2 | ||
| SPB80P06PGATMA1 | MOSFET P-CH 60V 80A TO-263 | ||
| SPB80P06P | MOSFET P-CH 60V 80A D2PAK | ||
| SPB80P06PGATMA1-CUT TAPE | Neu und Original | ||
| SPB80P06PGBTS100 | Neu und Original | ||
| SPB80P06P 80P06P | Neu und Original | ||
| SPB80P06P G | Trans MOSFET P-CH 60V 80A Automotive 3-Pin(2+Tab) TO-263 | ||
| SPB80P06PE3045A | Neu und Original | ||
| SPB80P06PG | Trans MOSFET SIPMOS P-CH -60V -80A 3-Pin(2+tab) TO-263 T/R - Tape and Reel (Alt: SPB80P06PGATMA1) | ||
| SPB80P06PG/BTS100 | Neu und Original |