SQ1470AEH-T1_GE3 vs SQ1470AEH vs SQ1470EH

 
PartNumberSQ1470AEH-T1_GE3SQ1470AEHSQ1470EH
DescriptionMOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-363-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current1.7 A--
Rds On Drain Source Resistance45 mOhms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage12 V--
Qg Gate Charge5.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.3 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET--
PackagingReel--
Height1 mm--
Length2.1 mm--
SeriesSQ--
Transistor Type1 N-Channel--
Width1.25 mm--
BrandVishay / Siliconix--
Forward Transconductance Min14 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.000265 oz--
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