SQD50P08-25L_GE3 vs SQD50P08-25L vs SQD50P08-28

 
PartNumberSQD50P08-25L_GE3SQD50P08-25LSQD50P08-28
DescriptionMOSFET 80V 50A 136W AEC-Q101 Qualified
ManufacturerVishay-Vishay / Siliconix
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSE--
TechnologySi-Si
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel-P-Channel
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance25 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge91 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation136 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameTrenchFET-TrenchFET
PackagingReel-Reel
Height2.38 mm--
Length6.73 mm--
SeriesSQ-SQ Series
Transistor Type1 P-Channel--
Width6.22 mm--
BrandVishay / Siliconix--
Forward Transconductance Min38 S--
Fall Time16 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time71 ns--
Typical Turn On Delay Time10 ns--
Vds Drain Source Breakdown Voltage--- 80 V
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