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| PartNumber | SQS401EN-T1_GE3 | SQS401ENW-T1_GE3 | SQS401EN |
| Description | MOSFET 40V 16A 62.5W AEC-Q101 Qualified | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 16 A | 16 A | - |
| Rds On Drain Source Resistance | 29 mOhms | 20 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 21.2 nC | 21.2 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 62.5 W | 62.5 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 1.04 mm | 1.04 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Series | SQ | SQ | - |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 12 S | 12 S | - |
| Fall Time | 10.2 ns | 10.2 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 36.5 ns | 36.5 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Transistor Type | - | 1 P-Channel | - |