STB100N10F7 vs STB100N6F7 vs STB100N10F7 100N10F7

 
PartNumberSTB100N10F7STB100N6F7STB100N10F7 100N10F7
DescriptionMOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFETMOSFET N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a D2PAK package
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V60 V-
Id Continuous Drain Current80 A100 A-
Rds On Drain Source Resistance8 mOhms5.6 mOhms-
Vgs th Gate Source Threshold Voltage4.5 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge61 nC30 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation150 W125 W-
ConfigurationSingleSingle-
TradenameSTripFETSTripFET-
PackagingReelTube-
SeriesSTB100N10F7STB100N6F7-
Transistor Type1 N-Channel--
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time15 ns15 ns-
Product TypeMOSFETMOSFET-
Rise Time40 ns55.5 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time46 ns28.6 ns-
Typical Turn On Delay Time27 ns21.6 ns-
Unit Weight0.139332 oz0.139332 oz-
Channel Mode-Enhancement-
Top