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STB100N10F7

STB100N10F7
Mfr. #:
STB100N10F7
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STB100N10F7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STB100N10F7 Mehr Informationen STB100N10F7 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
8 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
61 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
150 W
Aufbau:
Single
Handelsname:
StripFET
Verpackung:
Spule
Serie:
STB100N10F7
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
15 ns
Produktart:
MOSFET
Anstiegszeit:
40 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
46 ns
Typische Einschaltverzögerungszeit:
27 ns
Gewichtseinheit:
0.139332 oz
Tags
STB100N, STB100, STB10, STB1, STB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STMicroelectronics STB100N10F7
***ure Electronics
N-channel 100 V 0.0068 Ohm Surface Mount Power Mosfet - D2PAK-3
***p One Stop Global
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
***et Europe
Trans MOSFET N-CH 100V 80A 3-Pin D2PAK T/R
***ied Electronics & Automation
MOSFET N-Channel 100V 80A STripFET D2PAK
***i-Key
MOSFET N-CH 100V 80A D2PAK
***ukat
N-Ch 100V 80A 150W 0,008R D²Pak
***ronik
N-CH 100V 80A 6,8mOhm D2Pak
***ark
Mosfet, N-Ch, 100V, 80A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0068Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 80A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0068ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:120W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:STripFET VII DeepGATE Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CANALE N, 100V 80A, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:80A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0068ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:120W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:STripFET VII DeepGATE Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
STripFET™ F7 Power MOSFETs
STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. The STripFET F7 feature high avalanche ruggedness.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Teil # Mfg. Beschreibung Aktie Preis
STB100N10F7
DISTI # 497-14527-1-ND		STMicroelectronicsMOSFET N-CH 100V 80A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    STB100N10F7
    DISTI # 497-14527-6-ND    		STMicroelectronicsMOSFET N-CH 100V 80A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      STB100N10F7
      DISTI # 497-14527-2-ND      		STMicroelectronicsMOSFET N-CH 100V 80A D2PAK
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 1000:$1.2170
      STB100N10F7
      DISTI # STB100N10F7      		STMicroelectronicsTrans MOSFET N-CH 100V 80A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB100N10F7)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel      		Americas - 0
      • 1000:$1.1429
      • 2000:$1.0899
      • 4000:$1.0399
      • 6000:$0.9939
      • 10000:$0.9739
      STB100N10F7
      DISTI # 511-STB100N10F7      		STMicroelectronicsMOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFET
      RoHS: Compliant      		0
      • 1:$2.2500
      • 10:$1.9100
      • 100:$1.5300
      • 500:$1.3400
      • 1000:$1.1100
      STB100N10F7
      DISTI # 2889915      		STMicroelectronicsMOSFET, N-CH, 100V, 80A, TO-263
      RoHS: Compliant      		0
      • 1:£1.7500
      • 10:£1.3800
      • 100:£1.1100
      • 250:£1.0600
      • 500:£1.0100
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      OMO.#: OMO-STD100N10F7

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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1984
      Menge eingeben:
      Der aktuelle Preis von STB100N10F7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,24 $
      2,24 $
      10
      1,90 $
      19,00 $
      100
      1,52 $
      152,00 $
      500
      1,33 $
      665,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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