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| PartNumber | STB33N60DM6 | STB33N60DM2 | STB33N60DM2-CUT TAPE |
| Description | MOSFET | MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | D2PAK-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V | - |
| Id Continuous Drain Current | 25 A | 24 A | - |
| Rds On Drain Source Resistance | 128 mOhms | 130 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.25 V | 3 V | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Qg Gate Charge | 35 nC | 43 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 190 W | 190 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 35 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | 8 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 7 ns | 62 ns | - |
| Typical Turn On Delay Time | 14 ns | 17 ns | - |
| RoHS | - | Y | - |
| Technology | - | Si | - |
| Tradename | - | MDmesh | - |
| Packaging | - | Reel | - |
| Series | - | STB33N60DM2 | - |
| Unit Weight | - | 0.079014 oz | - |