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STB33N60DM2

STB33N60DM2
Mfr. #:
STB33N60DM2
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STB33N60DM2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STB33N60DM2 Mehr Informationen STB33N60DM2 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
24 A
Rds On - Drain-Source-Widerstand:
130 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
43 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
190 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
MDmesh
Verpackung:
Spule
Serie:
STB33N60DM2
Marke:
STMicroelectronics
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
8 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
62 ns
Typische Einschaltverzögerungszeit:
17 ns
Gewichtseinheit:
0.079014 oz
Tags
STB33N60D, STB33N60, STB33, STB3, STB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
***ure Electronics
N-Channel 600 V 130 mOhm Surface Mount DM2 Power Mosfet - D2PAK
***r Electronics
Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 600V, 24A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
Teil # Mfg. Beschreibung Aktie Preis
STB33N60DM2
DISTI # V36:1790_16116189		STMicroelectronicsTrans MOSFET N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R0
  • 1000000:$1.7270
  • 500000:$1.7290
  • 100000:$1.8230
  • 10000:$1.9670
  • 1000:$1.9900
STB33N60DM2
DISTI # V72:2272_17691770		STMicroelectronicsTrans MOSFET N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R0
    STB33N60DM2
    DISTI # 497-16354-1-ND    		STMicroelectronicsMOSFET N-CH 600V 24A
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		576In Stock
    • 500:$2.5583
    • 100:$3.0052
    • 10:$3.6680
    • 1:$4.0800
    STB33N60DM2
    DISTI # 497-16354-6-ND    		STMicroelectronicsMOSFET N-CH 600V 24A
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		576In Stock
    • 500:$2.5583
    • 100:$3.0052
    • 10:$3.6680
    • 1:$4.0800
    STB33N60DM2
    DISTI # 497-16354-2-ND    		STMicroelectronicsMOSFET N-CH 600V 24A
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 5000:$1.9152
    • 2000:$1.9900
    • 1000:$2.0947
    STB33N60DM2
    DISTI # STB33N60DM2    		STMicroelectronicsTrans MOSFET N-CH 600V 24A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB33N60DM2)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 6000:$1.7900
    • 10000:$1.7900
    • 4000:$1.8900
    • 2000:$1.9900
    • 1000:$2.0900
    STB33N60DM2
    DISTI # STB33N60DM2    		STMicroelectronicsTrans MOSFET N-CH 600V 24A 3-Pin D2PAK T/R (Alt: STB33N60DM2)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 0
    • 10000:€1.6900
    • 6000:€1.7900
    • 4000:€1.8900
    • 2000:€1.9900
    • 1000:€2.0900
    STB33N60DM2
    DISTI # 84Y8557    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 1:$1.7900
    STB33N60DM2
    DISTI # 511-STB33N60DM2    		STMicroelectronicsMOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package
    RoHS: Compliant    		0
    • 1000:$1.9900
    • 2000:$1.8900
    STB33N60DM2
    DISTI # 2531104    		STMicroelectronicsMOSFET, N-CH, 600V, 24A, TO-2638
    • 100:£2.8000
    • 10:£3.4100
    • 1:£4.2500
    STB33N60DM2
    DISTI # 2531104    		STMicroelectronicsMOSFET, N-CH, 600V, 24A, TO-263
    RoHS: Compliant    		8
    • 500:$3.8600
    • 100:$4.5300
    • 10:$5.5300
    • 1:$6.1500
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von STB33N60DM2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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