PartNumber | STB33N60M2 | STB33N60DM6 | STB33N60DM2 |
Description | MOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in D2PAK package | MOSFET | MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | D2PAK-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 650 V |
Id Continuous Drain Current | 26 A | 25 A | 24 A |
Rds On Drain Source Resistance | 125 mOhms | 128 mOhms | 130 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 3.25 V | 3 V |
Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
Qg Gate Charge | 45.5 nC | 35 nC | 43 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 190 W | 190 W | 190 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | MDmesh | - | MDmesh |
Packaging | Reel | - | Reel |
Series | STB33N60M2 | - | STB33N60DM2 |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 9 ns | 35 ns | 9 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 9.6 ns | 9 ns | 8 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 109 ns | 7 ns | 62 ns |
Typical Turn On Delay Time | 16 ns | 14 ns | 17 ns |
Unit Weight | 0.139332 oz | - | 0.079014 oz |