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| PartNumber | STF10N60M2 | STF10N60DM2 | STF10N62 |
| Description | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | MOSFET N-channel 600 V, 0.26 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP package | |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMICROELECTRONICS |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220FP-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 7.5 A | 8 A | - |
| Rds On Drain Source Resistance | 560 mOhms | 440 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Qg Gate Charge | 13.5 nC | 15 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 25 W | 25 W | - |
| Configuration | Single | Single | - |
| Tradename | MDmesh | MDmesh | - |
| Packaging | Tube | - | Tube |
| Series | STF10N60M2 | STF10N60DM2 | N-channel MDmesh |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Fall Time | 13.2 ns | 11.5 ns | 31 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8 ns | 5 ns | 15 ns |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 32.5 ns | 28 ns | 41 ns |
| Typical Turn On Delay Time | 8.8 ns | 11 ns | 14.5 ns |
| Unit Weight | 0.011640 oz | 0.068784 oz | 0.011640 oz |
| Channel Mode | - | Enhancement | - |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 30 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 8.4 A |
| Vds Drain Source Breakdown Voltage | - | - | 620 V |
| Rds On Drain Source Resistance | - | - | 680 mOhms |
| Qg Gate Charge | - | - | 42 nC |
| Forward Transconductance Min | - | - | 6 S |