STW55NM60N vs STW55NM50N vs STW55NM50

 
PartNumberSTW55NM60NSTW55NM50NSTW55NM50
DescriptionMOSFET N-Channel 600V Power MDmeshMOSFET N-channel 500V, 54 A Power II Mdmesh
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V500 V-
Id Continuous Drain Current51 A54 A-
Rds On Drain Source Resistance60 mOhms54 mOhms-
Vgs Gate Source Voltage25 V25 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation350 W350 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height20.15 mm20.15 mm-
Length15.75 mm15.75 mm-
SeriesSTW55NM60NSTW55NM50N-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time70 ns70 ns-
Product TypeMOSFETMOSFET-
Rise Time30 ns40 ns-
Factory Pack Quantity30600-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time225 ns250 ns-
Typical Turn On Delay Time40 ns40 ns-
Unit Weight1.340411 oz1.340411 oz-
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