TSM190N08CZ C0G vs TSM196NMW2B vs TSM196NW2B/33/6

 
PartNumberTSM190N08CZ C0GTSM196NMW2BTSM196NW2B/33/6
DescriptionMOSFET 75V N Channel Power Mosfet
ManufacturerTaiwan Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage75 V--
Id Continuous Drain Current190 A--
Rds On Drain Source Resistance3.4 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge160 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation250 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Transistor Type75 V--
BrandTaiwan Semiconductor--
Fall Time45 ns--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time85 ns--
Typical Turn On Delay Time25 ns--
Unit Weight0.211644 oz--
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