TSM250N02CX RFG vs TSM250N02DCQ RFG vs TSM253

 
PartNumberTSM250N02CX RFGTSM250N02DCQ RFGTSM253
DescriptionMOSFET 20V, 5.8A, Single N- Channel Power MOSFETMOSFET 20V Dual N-Channel MOSFETINSTOCK
ManufacturerTaiwan SemiconductorTaiwan Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3TDFN-6-
Number of Channels1 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current5.8 A5.8 A-
Rds On Drain Source Resistance20 mOhms20 mOhms-
Vgs th Gate Source Threshold Voltage400 mV400 mV-
Vgs Gate Source Voltage4.5 V4.5 V-
Qg Gate Charge7.7 nC7.7 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.56 W620 mW-
ConfigurationSingleDual-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type1 N-Channel2 N-Channel-
BrandTaiwan SemiconductorTaiwan Semiconductor-
Forward Transconductance Min6.5 S--
Fall Time7.6 ns7.6 ns-
Product TypeMOSFETMOSFET-
Rise Time11.6 ns11.6 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time23.9 ns23.9 ns-
Typical Turn On Delay Time4.1 ns4.1 ns-
Unit Weight0.000282 oz--
Top