PartNumber | TSM250N02CX RFG | TSM250N02DCQ RFG | TSM253 |
Description | MOSFET 20V, 5.8A, Single N- Channel Power MOSFET | MOSFET 20V Dual N-Channel MOSFET | INSTOCK |
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-23-3 | TDFN-6 | - |
Number of Channels | 1 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 5.8 A | 5.8 A | - |
Rds On Drain Source Resistance | 20 mOhms | 20 mOhms | - |
Vgs th Gate Source Threshold Voltage | 400 mV | 400 mV | - |
Vgs Gate Source Voltage | 4.5 V | 4.5 V | - |
Qg Gate Charge | 7.7 nC | 7.7 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1.56 W | 620 mW | - |
Configuration | Single | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Transistor Type | 1 N-Channel | 2 N-Channel | - |
Brand | Taiwan Semiconductor | Taiwan Semiconductor | - |
Forward Transconductance Min | 6.5 S | - | - |
Fall Time | 7.6 ns | 7.6 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 11.6 ns | 11.6 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 23.9 ns | 23.9 ns | - |
Typical Turn On Delay Time | 4.1 ns | 4.1 ns | - |
Unit Weight | 0.000282 oz | - | - |