ZXT13P12DE6TA vs ZXT13P12DE6 vs ZXT13P12DE6TAPBF

 
PartNumberZXT13P12DE6TAZXT13P12DE6ZXT13P12DE6TAPBF
DescriptionBipolar Transistors - BJT 12V PNP SuperSOT4TRANSISTOR, PNP, 12V, 4A, 1.1W, SOT-23, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:12V, Transition Frequency ft:55MHz, Power Dissipation Pd:1.1W, DC Collector Current:4A, DC Cur
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-6--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 12 V--
Collector Base Voltage VCBO- 29 V--
Emitter Base Voltage VEBO7.5 V--
Collector Emitter Saturation Voltage- 150 mV--
Maximum DC Collector Current4 A--
Gain Bandwidth Product fT55 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesZXT13P12--
DC Current Gain hFE Max300 at 10 mA, 2 V--
Height1.3 mm--
Length3.1 mm--
PackagingReel--
Width1.8 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 4 A--
DC Collector/Base Gain hfe Min300 at 10 mA, 2 V, 300 at 1 A, 2 V, 200 at 4 A, 2 V, 20 at 15 A, 2 V--
Pd Power Dissipation1.1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000229 oz--
Top