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| PartNumber | 2DB1386Q-13 | 2DB1386R-13 |
| Description | Bipolar Transistors - BJT 1000W -20Vceo | Bipolar Transistors - BJT PNP 2.5K BIPOLAR |
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-89-3 | SOT-89-3 |
| Transistor Polarity | PNP | PNP |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 20 V | - 20 V |
| Collector Base Voltage VCBO | 30 V | - 30 V |
| Emitter Base Voltage VEBO | 6 V | - 6 V |
| Maximum DC Collector Current | 5 A | - 5 A |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | 2DB13 | 2DB13 |
| Height | 1.5 mm | 1.5 mm |
| Length | 4.5 mm | 4.5 mm |
| Packaging | Reel | Reel |
| Width | 2.48 mm | 2.48 mm |
| Brand | Diodes Incorporated | Diodes Incorporated |
| DC Collector/Base Gain hfe Min | 120 | 180 at 500 mA, 2 V |
| Pd Power Dissipation | 1000 mW | 1000 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | - |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.001834 oz | 0.004603 oz |
| Collector Emitter Saturation Voltage | - | - 250 mV |
| DC Current Gain hFE Max | - | 180 at 500 mA, 2 V |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
2DB1386Q-13 | Bipolar Transistors - BJT 1000W -20Vceo | |
| 2DB1386R-13 | Bipolar Transistors - BJT PNP 2.5K BIPOLAR | ||
| 2DB1386Q-13 | Bipolar Transistors - BJT 1000W -20Vceo | ||
| 2DB1386R-13 | Bipolar Transistors - BJT PNP 2.5K BIPOLAR | ||
| 2DB1386R | Neu und Original | ||
| 2DB1386R-7 | Neu und Original |