PartNumber | 2N3501 | 2N3501L | 2N3501/TR |
Description | Bipolar Transistors - BJT NPN Gen Pur SS | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
Manufacturer | Central Semiconductor | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | N | N |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-39-3 | TO-39-3 | TO-39-3 |
Transistor Polarity | NPN | - | NPN |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 150 V | - | 150 V |
Collector Base Voltage VCBO | 150 V | - | 150 V |
Emitter Base Voltage VEBO | 6 V | - | 6 V |
Collector Emitter Saturation Voltage | 0.4 V | - | 0.4 V |
Maximum DC Collector Current | 0.3 A | - | 300 mA |
Gain Bandwidth Product fT | 150 MHz | - | - |
Minimum Operating Temperature | - 65 C | - | - 65 C |
Maximum Operating Temperature | + 150 C | - | + 200 C |
Series | 2N3501 | - | - |
DC Current Gain hFE Max | 300 | - | 300 at 150 mA, 10 V |
Height | 6.6 mm | - | - |
Length | 9.4 mm | - | - |
Packaging | Bulk | Tray | Reel |
Width | 9.4 mm | - | - |
Brand | Central Semiconductor | Microchip / Microsemi | Microchip / Microsemi |
Pd Power Dissipation | 1000 mW | - | 1 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 500 | 1 | 100 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 2N3501 PBFREE | - | - |
Unit Weight | 0.035486 oz | - | - |
Technology | - | - | Si |
DC Collector/Base Gain hfe Min | - | - | 20 at 300 mA, 10 V |