 |  |  | |
| PartNumber | 2N3501UB | 2N3501UB/TR | 2N3501UBJANS |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | |
| Manufacturer | Microchip | Microchip | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | N | N | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SMD-4 | LCC-3 | - |
| Packaging | Waffle | Reel | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 100 | - |
| Subcategory | Transistors | Transistors | - |
| Technology | - | Si | - |
| Transistor Polarity | - | NPN | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 150 V | - |
| Collector Base Voltage VCBO | - | 150 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| Collector Emitter Saturation Voltage | - | 0.4 V | - |
| Maximum DC Collector Current | - | 300 mA | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| DC Current Gain hFE Max | - | 300 at 150 mA, 10 V | - |
| DC Collector/Base Gain hfe Min | - | 20 at 300 mA, 10 V | - |
| Pd Power Dissipation | - | 1 W | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
2N3501UB | Bipolar Transistors - BJT Small-Signal BJT | |
| 2N3501UB/TR | Bipolar Transistors - BJT | ||
| 2N3501UB | Trans GP BJT NPN 150V 0.3A 3-Pin SMD | ||
| 2N3501UBJANS | Neu und Original | ||
| 2N3501UBJANTX | Amplifier - Waffle Pack (Alt: JANTX2N3501UB) | ||
| 2N3501UBJANTXV/TR | Trans GP BJT NPN 150V 300mA 3-Pin SMD T/R - Tape and Reel (Alt: JANTXV2N3501UB/TR) | ||
| 2N3501UB/TR | Bipolar Transistors - BJT |