2N5401Z stock, 2N5401Z, 2N5401ZL1

2N5401ZL1 vs 2N5401ZL1G


PartNumber	2N5401ZL1	2N5401ZL1G
Description	Bipolar Transistors - BJT 500mA 160V PNP	Bipolar Transistors - BJT 500mA 160V PNP
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	N	Y
Mounting Style	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3
Transistor Polarity	PNP	PNP
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	150 V	150 V
Collector Base Voltage VCBO	160 V	160 V
Emitter Base Voltage VEBO	5 V	5 V
Collector Emitter Saturation Voltage	0.5 V	0.5 V
Maximum DC Collector Current	0.6 A	0.6 A
Gain Bandwidth Product fT	300 MHz	300 MHz
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Height	5.33 mm	5.33 mm
Length	5.2 mm	5.2 mm
Packaging	Ammo Pack	Ammo Pack
Width	4.19 mm	4.19 mm
Brand	ON Semiconductor	ON Semiconductor
Continuous Collector Current	0.6 A	0.6 A
DC Collector/Base Gain hfe Min	50	50
Pd Power Dissipation	625 mW	625 mW
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	2000	2000
Subcategory	Transistors	Transistors

Search Part Number : "2N5401Z", Match & Start with "2N5401Z" - Total : 4

Hersteller	Teil #	Beschreibung
ON Semiconductor	2N5401ZL1	Bipolar Transistors - BJT 500mA 160V PNP
	2N5401ZL1G	Bipolar Transistors - BJT 500mA 160V PNP
	2N5401ZL1	TRANS PNP 150V 0.6A TO-92
	2N5401ZL1G	TRANS PNP 150V 0.6A TO-92