2N5551RLR

2N5551RLRA vs 2N5551RLRAG vs 2N5551RLRM

 
PartNumber2N5551RLRA2N5551RLRAG2N5551RLRM
DescriptionBipolar Transistors - BJT 600mA 180V NPNBipolar Transistors - BJT 600mA 180V NPNBipolar Transistors - BJT 600mA 180V NPN
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSNYN
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3TO-92-3
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max160 V160 V160 V
Collector Base Voltage VCBO180 V180 V180 V
Emitter Base Voltage VEBO6 V6 V6 V
Collector Emitter Saturation Voltage0.25 V0.25 V0.25 V
Maximum DC Collector Current0.6 A0.6 A0.6 A
Gain Bandwidth Product fT300 MHz300 MHz300 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Height5.33 mm5.33 mm5.33 mm
Length5.2 mm5.2 mm5.2 mm
PackagingReelReelAmmo Pack
Width4.19 mm4.19 mm4.19 mm
BrandON SemiconductorON SemiconductorON Semiconductor
Continuous Collector Current0.6 A0.6 A0.6 A
DC Collector/Base Gain hfe Min808080
Pd Power Dissipation625 mW625 mW625 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity200020002000
SubcategoryTransistorsTransistorsTransistors
Series-2N5551-
Unit Weight-0.070548 oz-
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
2N5551RLRA Bipolar Transistors - BJT 600mA 180V NPN
2N5551RLRAG Bipolar Transistors - BJT 600mA 180V NPN
2N5551RLRM Bipolar Transistors - BJT 600mA 180V NPN
2N5551RLRA TRANS NPN 160V 0.6A TO92
2N5551RLRAG TRANS NPN 160V 0.6A TO92
2N5551RLRM TRANS NPN 160V 0.6A TO-92
2N5551RLRMG TRANS NPN 160V 0.6A TO-92
2N5551RLRP TRANS NPN 160V 0.6A TO-92
2N5551RLRPG Bipolar Transistors - BJT 600mA 180V NPN
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