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2N5551RLRAG

2N5551RLRAG
Mfr. #:
2N5551RLRAG
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT 600mA 180V NPN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N5551RLRAG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N5551RLRAG Datasheet2N5551RLRAG Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
160 V
Kollektor- Basisspannung VCBO:
180 V
Emitter- Basisspannung VEBO:
6 V
Kollektor-Emitter-Sättigungsspannung:
0.25 V
Maximaler DC-Kollektorstrom:
0.6 A
Bandbreitenprodukt fT gewinnen:
300 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
2N5551
Höhe:
5.33 mm
Länge:
5.2 mm
Verpackung:
Spule
Breite:
4.19 mm
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
0.6 A
DC-Kollektor/Basisverstärkung hfe Min:
80
Pd - Verlustleistung:
625 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
2000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.070548 oz
Tags
2N5551RLR, 2N5551R, 2N5551, 2N555, 2N55, 2N5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
ON Semi 2N5551RLRAG NPN Bipolar Transistor; 0.6 A; 160 V; 3-Pin TO-92
***et
Transistor GP BJT NPN 160V 0.6A 3-Pin TO-92 T/R
***emi
Small Signal NPN Bipolar Transistor
***ark
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:160V; Collector Emitter Saturation Voltage, Vce(sat):80V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):80; Package/Case:TO-92 ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
2N5551RLRAG
DISTI # 2N5551RLRAGOSTR-ND		ON SemiconductorTRANS NPN 160V 0.6A TO92
RoHS: Compliant
Min Qty: 6000
Container: Tape & Reel (TR)		Limited Supply - Call
    2N5551RLRAG
    DISTI # 2N5551RLRAGOSCT-ND    		ON SemiconductorTRANS NPN 160V 0.6A TO92
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      2N5551RLRAG
      DISTI # 2N5551RLRAG      		ON SemiconductorTrans GP BJT NPN 160V 0.6A 3-Pin TO-92 T/R - Bulk (Alt: 2N5551RLRAG)
      RoHS: Compliant
      Min Qty: 4167
      Container: Bulk      		Americas - 0
      • 41670:$0.0739
      • 20835:$0.0749
      • 12501:$0.0759
      • 8334:$0.0769
      • 4167:$0.0779
      2N5551RLRAG
      DISTI # 863-2N5551RLRAG      		ON SemiconductorBipolar Transistors - BJT 600mA 180V NPN
      RoHS: Compliant      		0
        2N5551RLRA
        DISTI # 863-2N5551RLRA        		ON SemiconductorBipolar Transistors - BJT 600mA 180V NPN
        RoHS: Not compliant        		0
          2N5551RLRAGON SemiconductorSmall Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
          RoHS: Compliant          		90947
          • 500:$0.0800
          • 1000:$0.0800
          • 25:$0.0900
          • 100:$0.0900
          • 1:$0.1000
          2N5551RLRAGON Semiconductor 206
            Bild Teil # Beschreibung
            2N5551BU

            Mfr.#: 2N5551BU

            OMO.#: OMO-2N5551BU

            		 Bipolar Transistors - BJT NPN Transistor General Purpose
            2N5551CBU

            Mfr.#: 2N5551CBU

            OMO.#: OMO-2N5551CBU

            		 Bipolar Transistors - BJT NPN Transistor General Purpose
            2N5551TAR

            Mfr.#: 2N5551TAR

            OMO.#: OMO-2N5551TAR

            		 Bipolar Transistors - BJT NPN Transistor General Purpose
            2N5550-AT/P

            Mfr.#: 2N5550-AT/P

            OMO.#: OMO-2N5550-AT-P-1190

            		 Neu und Original
            2N5551-AP(MCC)

            Mfr.#: 2N5551-AP(MCC)

            OMO.#: OMO-2N5551-AP-MCC--1190

            		 Neu und Original
            2N5551-DIP

            Mfr.#: 2N5551-DIP

            OMO.#: OMO-2N5551-DIP-1190

            		 Neu und Original
            2N5551B-CJ

            Mfr.#: 2N5551B-CJ

            OMO.#: OMO-2N5551B-CJ-1190

            		 Neu und Original
            2N5551ZL1G

            Mfr.#: 2N5551ZL1G

            OMO.#: OMO-2N5551ZL1G-ON-SEMICONDUCTOR

            		 TRANS NPN 160V 0.6A TO-92
            2N5550TFR

            Mfr.#: 2N5550TFR

            OMO.#: OMO-2N5550TFR-ON-SEMICONDUCTOR

            		 Bipolar Transistors - BJT NPN Si Transistor Epitaxial
            2N5551YBUYTA

            Mfr.#: 2N5551YBUYTA

            OMO.#: OMO-2N5551YBUYTA-1190

            		 Neu und Original
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            1500
            Menge eingeben:
            Der aktuelle Preis von 2N5551RLRAG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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