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| PartNumber | 2N6431 | 2N6432 | 2N6430 |
| Description | Bipolar Transistors - BJT NPN High Voltage | Bipolar Transistors - BJT 200Vcbo 200Vceo 6.0Vebo 100mA 500mW | Bipolar Transistors - BJT . . |
| Manufacturer | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-18 | TO-18 | TO-18 |
| Transistor Polarity | NPN | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 300 V | 200 V | - |
| Collector Base Voltage VCBO | 300 V | 200 V | - |
| Emitter Base Voltage VEBO | 6 V | 5 V | - |
| Collector Emitter Saturation Voltage | 0.5 V | 0.5 V | - |
| Maximum DC Collector Current | 0.1 A | - | - |
| Gain Bandwidth Product fT | 50 MHz | 50 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 200 C | - |
| Series | 2N6431 | - | 2N6430 |
| Height | 5.33 mm | - | - |
| Length | 5.84 mm | - | - |
| Packaging | Bulk | Bulk | Bulk |
| Width | 5.84 mm | - | - |
| Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| Continuous Collector Current | 0.45 A | 100 mA | - |
| DC Collector/Base Gain hfe Min | 25 | 25 at 1 mA, 10 V | - |
| Pd Power Dissipation | 500 mW | 500 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 2000 | 2000 | 2000 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 2N6431 PBFREE | 2N6432 PBFREE | 2N6430 PBFREE |
| Unit Weight | 0.011020 oz | - | - |
| Technology | - | Si | - |