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| PartNumber | 2SC5729T106Q | 2SC5720 | 2SC5729 T106R |
| Description | Bipolar Transistors - BJT NPN | ||
| Manufacturer | ROHM Semiconductor | - | |
| Product Category | Bipolar Transistors - BJT | IC Chips | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 30 V | - | - |
| Collector Base Voltage VCBO | 30 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Maximum DC Collector Current | 0.5 A | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 120 at 50 mA, 2 V | - | - |
| Height | 0.8 mm | - | - |
| Length | 2 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.25 mm | - | - |
| Brand | ROHM Semiconductor | - | - |
| Continuous Collector Current | 0.5 A | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000988 oz | - | - |