2SJ36

2SJ360(F) vs 2SJ360 vs 2SJ360(F)-ND

 
PartNumber2SJ360(F)2SJ3602SJ360(F)-ND
DescriptionMOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V
ManufacturerToshibaTOSHIBA-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSC-62-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current1 A--
Rds On Drain Source Resistance730 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.6 mm--
Length4.6 mm--
ProductMOSFET Small Signal--
Series2SJ360--
Transistor Type1 P-Channel--
Width2.5 mm--
BrandToshiba--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time17 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
2SJ360(F) MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V
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