A2T21S

A2T21S160-12SR3 vs A2T21S260-12SR3 vs A2T21S161W12SR3

 
PartNumberA2T21S160-12SR3A2T21S260-12SR3A2T21S161W12SR3
DescriptionRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 48 W Avg., 28 VRF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 65 W Avg., 28 VRF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 38 W Avg., 28 V
ManufacturerNXPNXPNXP
Product CategoryRF MOSFET TransistorsRF MOSFET TransistorsRF MOSFET Transistors
RoHSYY-
TechnologySiSiSi
PackagingReelReelReel
BrandNXP / FreescaleNXP / FreescaleNXP Semiconductors
Product TypeRF MOSFET TransistorsRF MOSFET TransistorsRF MOSFET Transistors
Factory Pack Quantity250250250
SubcategoryMOSFETsMOSFETsMOSFETs
Part # Aliases935323736128935320716128935363146128
Unit Weight0.162645 oz0.162645 oz-
Transistor Polarity--N-Channel
Id Continuous Drain Current--1.5 A
Vds Drain Source Breakdown Voltage--- 500 mV, 65 V
Gain--19.1 dB
Output Power--38 W
Minimum Operating Temperature--- 40 C
Maximum Operating Temperature--+ 150 C
Mounting Style--SMD/SMT
Package / Case--NI-780S-2
Operating Frequency--2110 MHz to 2200 MHz
Type--RF Power MOSFET
Number of Channels--1 Channel
Vgs Gate Source Voltage--- 6 V, 10 V
Vgs th Gate Source Threshold Voltage--1.4 V
Hersteller Teil # Beschreibung RFQ
NXP / Freescale
NXP / Freescale
A2T21S160-12SR3 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 48 W Avg., 28 V
A2T21S260-12SR3 RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 65 W Avg., 28 V
A2T21S260W12NR3 RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 56 W Avg., 28 V
NXP Semiconductors
NXP Semiconductors
A2T21S161W12SR3 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 38 W Avg., 28 V
A2T21S160-12SR3 IC TRANS RF LDMOS
A2T21S260-12SR3 IC TRANS RF LDMOS
A2T21S260W12NR3 AIRFAST RF POWER LDMOS TRANSISTO
A2T21S161W12SR3 AIRFAST RF POWER LDMOS TRANSISTO
A2T21S160-12S Neu und Original
A2T21S260W12N Neu und Original
Top