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| PartNumber | ALD110900APAL | ALD110900PAL | ALD110900ASAL |
| Description | MOSFET Dual EPAD(R) N-Ch | MOSFET Dual EPAD(R) N-Ch | MOSFET Dual EPAD(R) N-Ch |
| Manufacturer | Infineon | Advanced Linear Devices | Advanced Linear Devices |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | SMD/SMT |
| Package / Case | TO-220-3 | PDIP-8 | SOIC-8 |
| Number of Channels | 1 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | P-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 10 V | 10 V |
| Id Continuous Drain Current | 15 A | 12 mA | 12 mA |
| Rds On Drain Source Resistance | 240 mOhms | 500 Ohms, 500 Ohms | 500 Ohms, 500 Ohms |
| Vgs Gate Source Voltage | 20 V | 10.6 V | 10.6 V |
| Qg Gate Charge | 37 nC | - | - |
| Minimum Operating Temperature | - 55 C | 0 C | 0 C |
| Maximum Operating Temperature | + 175 C | + 70 C | + 70 C |
| Pd Power Dissipation | 128 W | 500 mW | 500 mW |
| Configuration | Single | Dual | Dual |
| Channel Mode | Enhancement | Depletion | Depletion |
| Tradename | SIPMOS | - | - |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | SPP15P10 | ALD110900P | ALD110900A |
| Transistor Type | 1 P-Channel | 2 N-Channel | 2 N-Channel |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | Advanced Linear Devices | Advanced Linear Devices |
| Forward Transconductance Min | 9.3 S | - | - |
| Fall Time | 16 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 23 ns | - | - |
| Factory Pack Quantity | 500 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 33 ns | 10 ns | 10 ns |
| Typical Turn On Delay Time | 9.5 ns | 10 ns | 10 ns |
| Part # Aliases | SP000683160 SPP15P10PHXKSA1 SPP15P1PHXK | - | - |
| Unit Weight | 0.211644 oz | 0.032805 oz | 0.002998 oz |
| Vgs th Gate Source Threshold Voltage | - | 20 mV | 10 mV |
| Product | - | MOSFET Small Signal | MOSFET Small Signal |
| Type | - | MOSFET | MOSFET |
| Shipping Restrictions | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Advanced Linear Devices |
ALD110900APAL | MOSFET Dual EPAD(R) N-Ch | |
| ALD110900PAL | MOSFET Dual EPAD(R) N-Ch | ||
| ALD110908SAL | MOSFET Dual EPAD(R) N-Ch | ||
| ALD110908APAL | MOSFET Dual EPAD(R) N-Ch | ||
| ALD110904PAL | MOSFET Dual N-Channel EPAD | ||
| ALD110908ASAL | MOSFET Dual EPAD(R) N-Ch | ||
| ALD110900SAL | MOSFET Dual EPAD(R) N-Ch | ||
| ALD110902SAL | MOSFET Dual EPAD(R) N-Ch | ||
| ALD110900ASAL | MOSFET Dual EPAD(R) N-Ch | ||
| ALD110904SAL | MOSFET Dual N-Channel EPAD | ||
| ALD110900PAL | IGBT Transistors MOSFET Dual EPAD(R) N-Ch | ||
| ALD110900APAL | IGBT Transistors MOSFET Dual EPAD(R) N-Ch | ||
| ALD110908ASAL | MOSFET 2N-CH 10.6V 8SOIC |