APT200GN60JD

APT200GN60JDQ4 vs APT200GN60JDQ vs APT200GN60JDQ4G

 
PartNumberAPT200GN60JDQ4APT200GN60JDQAPT200GN60JDQ4G
DescriptionIGBT Modules FG, IGBT-COMBI, 600V, 200A, SOT-227IGBT 600V 283A 682W SOT227
ManufacturerMicrochip-Microsemi Corporation
Product CategoryIGBT Modules-IGBTs - Modules
RoHSY--
ProductIGBT Silicon Modules--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.5 V--
Continuous Collector Current at 25 C283 A--
Gate Emitter Leakage Current600 nA--
Pd Power Dissipation682 W--
Package / CaseSOT-227-4--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
PackagingTube--
Height9.6 mm--
Length38.2 mm--
Operating Temperature Range- 55 C to + 175 C--
Width25.4 mm--
BrandMicrochip / Microsemi--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity1--
SubcategoryIGBTs--
TradenameISOTOP--
Unit Weight1.058219 oz--
Series---
Package Case--ISOTOP
Mounting Type--Chassis Mount
Supplier Device Package--ISOTOPR
Input--Standard
Configuration--Single
Power Max--682W
Current Collector Ic Max--283A
Voltage Collector Emitter Breakdown Max--600V
Current Collector Cutoff Max--50μA
IGBT Type--Trench Field Stop
Vce on Max Vge Ic--1.85V @ 15V, 200A
Input Capacitance Cies Vce--14.1nF @ 25V
NTC Thermistor--No
Hersteller Teil # Beschreibung RFQ
Microchip / Microsemi
Microchip / Microsemi
APT200GN60JDQ4 IGBT Modules FG, IGBT-COMBI, 600V, 200A, SOT-227
APT200GN60JDQ4 IGBT Modules
APT200GN60JDQ4G IGBT 600V 283A 682W SOT227
APT200GN60JDQ Neu und Original
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