 | | | |
| PartNumber | APTGT150DH60TG | APTGT150DH120G | APTGT150DH170G |
| Description | IGBT Modules DOR CC4108 | IGBT Modules DOR CC6245 | IGBT Modules DOR CC6174 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 600 V | 1.2 kV | - |
| Collector Emitter Saturation Voltage | 1.5 V | 1.7 V | - |
| Continuous Collector Current at 25 C | 225 A | 220 A | - |
| Gate Emitter Leakage Current | 400 nA | 400 nA | - |
| Pd Power Dissipation | 480 W | 690 W | - |
| Package / Case | SP4 | SP6 | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 100 C | + 100 C | - |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 3.880136 oz | 3.880136 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT150DH60TG | IGBT Modules DOR CC4108 | |
| APTGT150DH120G | IGBT Modules DOR CC6245 | ||
| APTGT150DH170G | IGBT Modules DOR CC6174 |