AUIRLU

AUIRLU024Z vs AUIRLU3110Z vs AUIRLU2905

 
PartNumberAUIRLU024ZAUIRLU3110ZAUIRLU2905
DescriptionMOSFET Automotive FET 55V 7A 58mOhmDarlington Transistors MOSFET AUTO 100V 1 N-CH HEXFET 14mOhmsMOSFET N-CH 55V 42A IPAK
ManufacturerInfineonInternational RectifierIR
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-251-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current16 A--
Rds On Drain Source Resistance46 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage16 V--
Qg Gate Charge9.9 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation35 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
PackagingTubeTubeTube
Height6.22 mm--
Length6.73 mm--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width2.38 mm--
BrandInfineon / IR--
Forward Transconductance Min7.4 S--
Fall Time16 ns--
Product TypeMOSFET--
Rise Time43 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time8.2 ns--
Part # AliasesSP001521312--
Unit Weight0.011993 oz0.139332 oz0.211644 oz
Package Case-IPAK-3TO-220-3
Pd Power Dissipation-140 W80 W
Vgs Gate Source Voltage-16 V16 V
Id Continuous Drain Current-63 A51 A
Vds Drain Source Breakdown Voltage-100 V55 V
Rds On Drain Source Resistance-16 mOhms13.5 mOhms
Qg Gate Charge-34 nC-
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
AUIRLU3114Z MOSFET N-CHANNEL 30 / 40
AUIRLU024Z MOSFET Automotive FET 55V 7A 58mOhm
Infineon Technologies
Infineon Technologies
AUIRLU3110Z Darlington Transistors MOSFET AUTO 100V 1 N-CH HEXFET 14mOhms
AUIRLU024Z MOSFET N CH 55V 16A SOT 223
AUIRLU2905 MOSFET N-CH 55V 42A IPAK
AUIRLU3114Z MOSFET NCH 40V 130A IPAK
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