BCX511

BCX5110TA vs BCX5116E6327 vs BCX5116E6327HTSA1

 
PartNumberBCX5110TABCX5116E6327BCX5116E6327HTSA1
DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1KTrans GP BJT PNP 45V 1A 4-Pin(3+Tab) SOT-89 T/R - Bulk (Alt: BCX5116E6327HTSA1)
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-89-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO45 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesBCX5110--
DC Current Gain hFE Max63 at 150 mA, 2 V--
Height1.5 mm--
Length4.5 mm--
PackagingReel--
Width2.5 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min63 at 150 mA, 2 V--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.001834 oz--
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
BCX5116TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K
BCX5110TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K
Infineon Technologies
Infineon Technologies
BCX5116H6327XTSA1 Bipolar Transistors - BJT AF TRANSISTORS
BCX5116H6433XTMA1 Bipolar Transistors - BJT AF TRANSISTORS
BCX5116E6327 Neu und Original
BCX5116E6327HTSA1 Trans GP BJT PNP 45V 1A 4-Pin(3+Tab) SOT-89 T/R - Bulk (Alt: BCX5116E6327HTSA1)
BCX5116H6433XTMA1 Bipolar Transistors - BJT AF TRANSISTORS
BCX5116H6327XTSA1 Bipolar Transistors - BJT AF TRANSISTORS
NXP Semiconductors
NXP Semiconductors
BCX51115 Now Nexperia BCX51 - Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA
BCX5110TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K
BCX5116TA Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K
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